Switching device electrically connected to a lead frame by a bonding material

A semiconductor device, comprising:

• a conductive member;
• a plurality of semiconductor elements each including a switching element and held by the conductive member via a first bonding material;
• a bonding part provided on an upper surface of each of the plurality of semiconductor elements and electrically connected to an electrode of the switching element other than a gate electrode;
• and
• a lead bonded to the bonding part via a second bonding material, wherein
• the plurality of semiconductor elements are connected in parallel to each other,
• the bonding part and the second bonding material are provided in a region including a center part of the upper surface of each of the plurality of semiconductor elements,
• a horizontal-vertical ratio of the semiconductor element in a plan view is equal to or larger than 1.5 and equal to or smaller than 2.5, and an area of the semiconductor element is equal to or smaller than 150 mm2, the lead includes a through hole in a bonding surface where the lead is bonded to the bonding part, and the through hole is provided not to be overlapped with the center part in a plan view.

A semiconductor device, comprising:

• a conductive member;
• a semiconductor element including a switching element and held by the conductive member via a first bonding material;
• at least one bonding part provided on an upper surface of the semiconductor element and electrically connected to an electrode of the switching element other than a gate electrode;
• and a lead bonded to the bonding part via a second bonding material, wherein the bonding part and the second bonding material are provided in a region including a center part of the upper surface of the semiconductor element, and a horizontal-vertical ratio of the semiconductor element in a plan view is equal to or larger than 1.5 and equal to or smaller than 2.5, and an area of the semiconductor element is equal to or smaller than 150 mm2, the first bonding material includes a void, and the void is located on a lower side of the center part.

A semiconductor device, comprising:

• a conductive member;
• a plurality of semiconductor elements each including a switching element and held by the conductive member via a first bonding material;
• a bonding part provided on an upper surface of each of the plurality of semiconductor elements and electrically connected to an electrode of the switching element other than a gate electrode;
• and a lead bonded to the bonding part via a second bonding material, wherein the plurality of semiconductor elements are connected in parallel to each other, the bonding part and the second bonding material are provided in a region including a center part of the upper surface of each of the plurality of semiconductor elements, and a horizontal-vertical ratio of the semiconductor element in a plan view is equal to or larger than 1.5and equal to or smaller than 2.5, and an area of the semiconductor element is equal to or smaller than 150 mm2, the first bonding material includes a void, and the void is located on a lower side of the center part.