Multichip IC devices in glass medium and including an interconnect bridge die

An integrated circuit (IC) device, comprising:

• a first IC die adjacent to a second IC die;
• a third IC die on a first side of the first and second IC dies, wherein the third IC die comprises metallization features interconnecting the first IC die to the second IC die, wherein each of the first and second IC dies further comprises a device layer over a die substrate and one or more conductive vias extending through the die substrate;
• a glass substrate adjacent to the first and second IC dies and coplanar with the first sides of the first and second IC dies;
• and
• a routing structure on a second side of the glass substrate and a second side of the first and second IC dies, the routing structure comprising second metallization features interconnecting the second sides of each of the first and second IC dies to interconnect interfaces, wherein the conductive vias couple the device layer to the third IC die or to the routing structure.

A system comprising:

• a plurality of laterally adjacent IC dies;
• an interconnect bridge die on a first side of the laterally adjacent IC dies, the interconnect bridge die comprising first metallization features interconnecting the plurality of laterally adjacent IC die;
• a glass substrate material between edge sidewalls of the plurality of adjacent IC dies, the glass substrate material coplanar with the first side of the laterally adjacent IC dies, wherein the glass substrate is in direct contact with a portion of the interconnect bridge die spanning a distance between adjacent edges of the IC dies;
• and
• a routing structure on a second side of the plurality of adjacent IC dies, opposite the interconnect bridge die, the routing structure spanning a portion of the glass substrate material, and comprising second metallization features interconnecting the plurality of adjacent IC dies to interconnect features.