Method to improve interconnect coefficient of thermal expansion
AssigneeApplied Materials, Inc.
InventorsTyler Sherwood, Raghav Sreenivasan
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Abstract
The present technology includes semiconductor processing methods and devices with improved expansion of the bulk material in substrate features. Methods include cleaning a substrate that is formed from silicon oxide and that defines one or more features and that includes a liner that extends across the silicon oxide and within one or more features and a copper-containing layer deposited on the liner and extending within the one or more features. Methods include depositing a second metal over the substrate, where the second metal has a coefficient of thermal expansion of greater than or about 17. Methods also include diffusing the second metal into the copper containing layer to form a copper alloy.
Claims15
A semiconductor processing method comprising:
- cleaning a substrate, wherein the substrate comprises:
- silicon oxide defining one or more features,
- a liner extending across the silicon oxide and within the one or more features, and
- a copper-containing layer deposited on the liner and extending within the one or more features;
- depositing a second metal over the substrate, wherein the second metal has a coefficient of thermal expansion of greater than or about 17;
- diffusing the second metal into the copper-containing layer;
- and
- annealing the second metal into the copper-containing layer at a temperature of less than 350° C. to form a copper-alloy.
A semiconductor processing method comprising:
- etching one or more features having a first side, a second side, a bottom, and a height to width aspect ratio of greater than or about 6:1 in a substrate, wherein the substrate comprises silicon oxide;
- forming a liner extending across the silicon oxide and within the one or more features, and depositing a copper-containing layer on the liner and extending within the one or more features;
- deoxidizing the copper-containing layer;
- depositing a second metal over the copper-containing layer, wherein the second metal has a coefficient of thermal expansion of greater than or about 17;
- and
- annealing the second metal into the copper-containing layer at an annealing temperature of less than 350° C. to form a copper-alloy.
Dependencies are inferred from the claim text.