Package structure and method for fabricating the same

A method, comprising:

• forming a first conductive feature over a first semiconductor structure, wherein the first conductive feature comprises nanotwinned copper;
• coating a first organic material layer over the first conductive feature and the first semiconductor structure, wherein the first organic material layer comprises an organic precursor and a solvent;
• removing a portion of the solvent from the first organic material layer;
• partially curing the first organic material layer;
• and
• performing a hybrid bonding process to bond the first organic material layer to a second organic material layer of a second semiconductor structure and bond the first conductive feature to a second conductive feature of the second semiconductor structure, wherein the hybrid bonding process is performed such that the first organic material layer is fully cured.

A package structure, comprising:

• a first semiconductor structure having a first side;
• a first conductive feature over the first side of the first semiconductor structure
• a first dielectric layer surrounding the first conductive feature;
• a second semiconductor structure having a second side facing the first side of the first semiconductor structure;
• a second conductive feature over the second side of the second semiconductor structure, wherein the first and second conductive features comprise nanotwinned copper;
• and
• a second dielectric layer surrounding the first conductive feature, wherein the first and second dielectric layers comprise a same dielectric material, wherein the second dielectric layer is bonded with the first dielectric layer, and the second conductive feature is bonded with the first conductive feature, wherein the same dielectric material of the first dielectric layer and the second dielectric layer is an organic material having a theoretic glass transition temperature in a range from 150° C. to 250° C.