Methods of separating semiconductor dies
AssigneeTexas Instruments Incorporated
InventorMichael Todd Wyant
Life of this patent
Estimating the term…
Abstract
Methods of separating semiconductor dies are described. The method can separate individual semiconductor dies from a semiconductor wafer without using a blade. The methods include a plasma etch process utilizing metal structures formed on a back side of the wafer as masks to remove a portion of the semiconductor wafer from the back side. The portion removed by the plasma etch process corresponds to the scribe lines between the semiconductor dies. The plasma etch process terminates at a dielectric layer formed on a front side of the wafer. The dielectric layer may be severed to complete the separation process. Moreover, an ultrasonic water jet process may be utilized to remove burrs of the dielectric layer that has been severed.
Claims24
A method, comprising:
- forming a patterned metal layer on a back side of a semiconductor substrate including a plurality of dies on a front side opposite the back side, wherein a scribe region of the semiconductor substrate is uncovered by the patterned metal layer;
- applying a plasma etch process configured to remove the scribe region uncovered by the patterned metal layer, wherein a portion of a dielectric layer disposed at the front side of the semiconductor substrate is exposed as a result of applying the plasma etch process;
- attaching an adhesive tape to the patterned metal layer;
- severing the portion of the dielectric layer by pulling the adhesive tape in opposite directions;
- and
- applying an ultrasonic water jet process configured to remove burrs of the dielectric layer based on severing the portion of the dielectric layer.
A method, comprising:
- forming a patterned conductive layer on a back side of a semiconductor substrate including a plurality of dies at a front side opposite the back side, wherein a scribe area of the semiconductor substrate is uncovered by the patterned conductive layer;
- removing the scribe area of the semiconductor substrate, wherein a portion of a dielectric layer located at the front side of the semiconductor substrate is exposed from the back side as a result of removing the scribe area of the semiconductor substrate;
- attaching a tape to the patterned conductive layer;
- breaking the portion of the dielectric layer by expanding the tape attached to the patterned conductive layer;
- and
- removing burrs of the portion of the dielectric layer that has been broken.
Dependencies are inferred from the claim text.