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US 12,685,043 B2Granted
Reactive-ion deposition processes for dielectric material formation
AssigneeApplied Materials, Inc.
InventorsBhaskar Jyoti Bhuyan, Mark J. Saly, Lakmal Charidu Kalutarage, Feng Q. Liu, Jeffrey W. Anthis, Abhijit Basu Mallick, Akhil Singhal
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Abstract
A method includes obtaining a base structure of an electronic device, the base structure including at least one opening, and forming, using a reactive-ion deposition process, a dielectric material within the at least one opening.
Claims20
A method comprising:
- obtaining a base structure of an electronic device, the base structure comprising at least one opening defined by a bottom surface and sidewalls;
- and
- forming, using a reactive-ion directional plasma treatment deposition process, a dielectric material within the at least one opening in an upward direction from the bottom surface to reduce formation of the dielectric material on the sidewalls.
A method comprising:
- obtaining a base structure of an electronic device, the base structure comprising at least one opening defined by a bottom surface and sidewalls;
- and
- forming, using a reactive-ion directional plasma treatment deposition process, a dielectric material within the at least one opening in an upward direction from the bottom surface to reduce formation of the dielectric material on the sidewalls, wherein the dielectric material comprises at least one of:
- a silicon oxide material, a silicon nitride material, or a silicon carbide material.
1 more element
Dependencies are inferred from the claim text.