Light-emitting transistor and display substrate
AssigneesBeijing BOE Technology Development Co., Ltd., Boe Technology Group Co., Ltd.
InventorDong Li
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Abstract
The present disclosure provides a light-emitting transistor and a display substrate. The display substrate includes a plurality of pixel circuits. Each pixel circuit uses a light-emitting transistor that integrates a control transistor and a quantum dot light-emitting device in the same device, and the light-emitting transistor can simultaneously realize the functions of switch controlling and light-emitting display.
Claims20
A light-emitting transistor, comprising:
- a substrate;
- a gate on the substrate;
- an insulating layer on a side, facing away from the substrate, of the gate;
- an active layer on a side, facing away from the gate, of the insulating layer;
- first electrodes on a side, facing away from the insulating layer, of the active layer, wherein the first electrodes have set patterns;
- a quantum dot light-emitting layer on a side, facing away from the active layer, of the first electrodes;
- wherein the quantum dot light-emitting layer is filled between the set patterns of the first electrodes and comes into contact with the active layer;
- wherein the quantum dot light-emitting layer covers a surface and a side surface, facing away from the active layer, of the set pattern of the first electrode;
- and the quantum dot light-emitting layer covers a surface of the active layer not covered by the first electrodes;
- and
- a second electrode on a side, facing away from the first electrode, of the quantum dot light-emitting layer.
A display substrate, comprising a plurality of pixel circuits, wherein each of the plurality of pixel circuits comprises:
- a switch transistor, wherein a gate of the switch transistor is coupled to a scanning signal end, and a first electrode of the switch transistor is coupled to a data signal end;
- a light-emitting transistor comprising a gate, an insulating layer, first electrodes, an active layer, a quantum dot light-emitting layer and a second electrode that are sequentially stacked;
- wherein the first electrodes have set patterns, and the active layer is filled between the set patterns of the first electrodes and comes into contact with the insulating layer;
- wherein the active layer covers a surface and a side surface, facing away from the insulating layer, of the set pattern of the first electrode;
- the active layer covers a surface of the insulating layer not covered by the first electrodes;
- and the gate of the light-emitting transistor is coupled to a second electrode of the switch transistor, the first electrode of the light-emitting transistor is coupled to a first power source signal end, and the second electrode of the light-emitting transistor is coupled to a second power source signal end;
- and
- a capacitor, wherein the capacitor is coupled between the first electrode and the gate of the light-emitting transistor.
Dependencies are inferred from the claim text.