Display panel and manufacture method thereof

A manufacture method of a display panel, comprising:

• providing a substrate;
• preparing an active layer on the substrate, preparing a gate insulation layer on the active layer, preparing a gate on the gate insulation layer, and preparing an interlayer insulation layer on the gate, wherein the active layer comprises a source part, a drain part, and a channel part disposed between the source part and the drain part;
• defining a first through-hole and a second through-hole on the interlayer insulation layer and the gate insulation layer through a same photomask, wherein the first through-hole corresponds to the source part, and the second through-hole corresponds to the drain part;
• preparing a photosensitive semiconductor layer at least in the second through-hole, preparing a protective layer on the photosensitive semiconductor layer, and patterning the photosensitive semiconductor layer and the protective layer through a same photomask, wherein the photosensitive semiconductor layer is disposed on the drain part and is connected to the drain part;
• preparing a source-drain metal layer on the interlayer insulation layer, and patterning the source-drain metal layer to form a source connected to the source part through the first through-hole;
• preparing a planarization layer on the source-drain metal layer and the photosensitive semiconductor layer, and patterning the planarization layer to define a third through-hole;
• preparing a second transparent electrode layer on the planarization layer, preparing a first insulation layer on the second transparent electrode layer, when a fourth through-hole is defined on a part of the first insulation layer corresponding to the third through-hole, removing the protective layer inside the third through-hole by a same process, and exposing a part of the photosensitive semiconductor layer by the third through-hole;
• oxidizing, through a plasma treatment, the part of the photosensitive semiconductor layer exposed by the third through-hole to form an insulated connection insulation layer;
• and
• preparing a first transparent electrode layer on the first insulation layer, and patterning the first transparent electrode layer to form a second electrode, wherein the second electrode is connected to the connection insulation layer through the third through-hole, and is connected to the photosensitive semiconductor layer through the connection insulation layer.