Photodetector

A photodetector, comprising:

• a plurality of photoelectric conversion sections that is provided to a semiconductor substrate, wherein the photoelectric conversion sections each include:
• a first region of a first electrical conduction type that is provided at a first surface side of the semiconductor substrate;
• a second region of a second electrical conduction type that is provided at a second surface side of the semiconductor substrate opposite to the first surface side;
• a third region of a third electrical conduction type that is provided in a region between the first region and the second region of the semiconductor substrate, the third region absorbing incident light;
• a first electrode that is directly electrically coupled to the first region at the first surface side, wherein the first electrode is disposed only near the first surface side of the semiconductor substrate to provide a cathode function to the photodetector;
• a second electrode that is directly electrically coupled to the second region at the second surface side, wherein the second electrode is disposed only near the second surface side of the semiconductor substrate to provide an anode function to the photodetector;
• and
• a gate electrode that is electrically coupled to the third region at the second surface side with a gate insulating film interposed in between;
• wherein the first electrical conduction type is different from the second electrical conduction type;
• wherein the first region is disposed directly adjacent to the third region on the first surface side of the semiconductor substrate, and wherein the second region is disposed directly adjacent to the third region on the second surface side of the semiconductor substrate.