Semiconductor device, inverter circuit, drive device, vehicle, and elevator

A semiconductor device, comprising:

• a silicon carbide layer having a first face parallel to a first direction and a second direction crossing the first direction and a second face facing away from the first face;
• a first trench disposed in the silicon carbide layer, disposed on a side of the first face, and extending in the first direction;
• a second trench disposed in the silicon carbide layer, disposed on the side of the first face, extending in the first direction, and disposed in the second direction with respect to the first trench;
• a third trench disposed in the silicon carbide layer, disposed on the side of the first face, extending in the second direction, and continuous with the first trench and the second trench;
• a fourth trench disposed in the silicon carbide layer, disposed on the side of the first face, extending in the first direction, disposed between the first trench and the second trench, and spaced from the third trench in the first direction;
• a fifth trench disposed in the silicon carbide layer, disposed on the side of the first face, extending in the first direction, disposed between the fourth trench and the second trench, and spaced from the third trench in the first direction;
• a sixth trench disposed in the silicon carbide layer, disposed on the side of the first face, extending in the second direction, continuous with the fourth trench and the fifth trench, and spaced from the third trench in the first direction;
• an eighth trench disposed in the silicon carbide layer, disposed on the side of the first face, extending in the second direction, continuous with the fourth trench, and spaced from the first trench in the first direction;
• a first silicon carbide region of n-type disposed in the silicon carbide layer;
• a second silicon carbide region of p-type disposed in the silicon carbide layer and disposed between the first silicon carbide region and the first face, a distance of the second silicon carbide region from the second face being larger than a distance from the second face to the first trench;
• a third silicon carbide region of n-type disposed in the silicon carbide layer and disposed between the second silicon carbide region and the first face;
• a gate electrode disposed in the first trench, the second trench, the third trench, the fourth trench, the fifth trench, the sixth trench, and the eighth trench;
• a gate insulating layer disposed between the gate electrode and the silicon carbide layer;
• a first wiring layer disposed on the side of the first face with respect to the silicon carbide layer, disposed in the first direction with respect to the third trench, and extending in the second direction;
• a first conductive layer crossing the third trench, connected to the gate electrode, and is electrically connected to the first wiring layer;
• a second wiring layer disposed on the side of the first face with respect to the silicon carbide layer, disposed in the first direction with respect to the eighth trench, and extending in the second direction;
• a second conductive layer crossing the eighth trench, connected to the gate electrode, and electrically connected to the second wiring layer;
• a first electrode disposed on the side of the first face with respect to the silicon carbide layer and electrically connected to the third silicon carbide region;
• and
• a second electrode disposed on a side of the second face with respect to the silicon carbide layer, wherein
• the first conductive layer is disposed between the gate electrode and the first wiring layer, and the first conductive layer is in direct contact with the gate electrode and the first wiring layer,
• the first conductive layer is in direct contact with the gate electrode at a position where the first conductive layer crosses the third trench,
• a distance between the sixth trench and the first wiring layer in the first direction is smaller than a distance between the sixth trench and the second wiring layer in the first direction,
• a distance between the third trench and the first wiring layer in the first direction is smaller than a distance between the third trench and the second wiring layer in the first direction,
• the sixth trench is spaced from the third trench in the first direction, and
• a distance between the eighth trench and the second wiring layer in the first direction is smaller than a distance between the eighth trench and the first wiring layer in the first direction.