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US 12,684,788 B2Granted
Storage device
AssigneeKioxia Corporation
InventorsReika Tanaka, Kunifumi Suzuki, Kiwamu Sakuma, Yoko Yoshimura, Takamasa Hamai, Kensuke Ota, Yusuke Higashi, Yoshiaki Asao, Masamichi Suzuki
Life of this patent
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Abstract
A storage device includes a first electrode, a second electrode, a first dielectric layer between the first and second electrodes and including oxygen and at least one of hafnium and zirconium, a second dielectric layer between the first electrode and the first dielectric layer, and an intermediate region between the first and second dielectric layers and in which a plurality of metallic portions are provided.
Claims19
A storage device, comprising:
- a first electrode;
- a second electrode;
- a first dielectric layer between the first and second electrodes, and comprising a first dielectric material including oxygen and at least one of hafnium and zirconium;
- a second dielectric layer between the first electrode and the first dielectric layer, and comprising a second dielectric material different from the first dielectric material;
- and
- an intermediate region between the first and second dielectric layers and in which a plurality of discrete metallic portions are provided,
- wherein the discrete metallic portions include metallic elements,
- wherein each of the first and second dielectric layers includes metallic elements that are same as the metallic elements included in the plurality of discrete metallic portions,
- a concentration of the metallic elements in the first dielectric material decreases as a distance from the intermediate region increases, and
- a concentration of the metallic elements in the second dielectric material decreases as a distance from the intermediate region increases.
7 more elements
A storage device, comprising:
- a first electrode;
- a second electrode;
- a first dielectric layer between the first and second electrodes, and comprising a first dielectric material including oxygen and at least one of hafnium and zirconium;
- a second dielectric layer between the first electrode and the first dielectric layer, and comprising a second dielectric material different from the first dielectric material;
- and
- an intermediate region between the first and second dielectric layers and including a plurality of discrete metallic elements,
- wherein each of the first and second dielectric layers includes metallic elements that are same as the metallic elements included in the intermediate region,
- a concentration of the metallic elements in the first dielectric material decreases as a distance from the intermediate region increases,
- a concentration of the metallic elements in the second dielectric material decreases as a distance from the intermediate region increases, and
- wherein
- the intermediate region transitions to a first state when a voltage applied to the second electrode is higher than a voltage applied to the first electrode,
- the intermediate region transitions to a second state when a voltage applied to the second electrode is lower than a voltage applied to the first electrode, and
- an absolute value of the voltage applied to the second electrode in transition to the first state is greater than an absolute value of the voltage applied to the second electrode in transition to the second state.
10 more elements
A storage device, comprising:
- a plurality of first wirings extending along a first direction;
- a plurality of second wirings extending along a second direction crossing the first direction;
- and
- a plurality of memory cells, each of which is connected between one of the first wirings and one of the second wirings and includes a capacitor and a transistor connected in series, wherein the capacitor includes:
- a first electrode,
- a second electrode,
- a first dielectric layer between the first and second electrodes, and comprising a first dielectric material including oxygen and at least one of hafnium and zirconium,
- a second dielectric layer between the first electrode and the first dielectric layer, and comprising a second dielectric material different from the first dielectric material;
- and
- an intermediate region between the first and second dielectric layers and in which a plurality of discrete metallic portions are provided,
- wherein the discrete metallic portions include metallic elements,
- wherein each of the first and second dielectric layers includes metallic elements that are same as the metallic elements included in the plurality of discrete metallic portions,
- a concentration of the metallic elements in the first dielectric material decreases as a distance from the intermediate region increases, and
- a concentration of the metallic elements in the second dielectric material decreases as a distance from the intermediate region increases.
11 more elements
Dependencies are inferred from the claim text.