Acoustic wave device and multiplexer
AssigneeMurata Manufacturing Co., Ltd.
InventorToshiaki Takata
Life of this patent
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Abstract
A filter includes a series arm resonator, parallel arm resonators, a multilayer substrate including main surfaces, a piezoelectric substrate, and a bump electrode on the piezoelectric substrate. Each of the parallel arm resonators include an IDT electrode on the piezoelectric substrate. The bump electrode is connected to the IDT electrode. The multilayer substrate includes a first planar electrode on a first of the main surfaces and bonded to the bump electrode, a second planar electrode on a second of the main surfaces and connected to a ground, and via conductors that connect the first and second planar electrodes. In a plan view of the first main surface, the bump electrode is between via conductors connected to the first planar electrode.
Claims22
An acoustic wave device comprising:
- a first series arm resonator in a series arm path connecting a first input/output terminal and a second input/output terminal;
- a plurality of parallel arm resonators connected between the series arm path and a ground;
- a first substrate including a first main surface and a second main surface facing each other, and a plurality of dielectric layers;
- a second substrate including a third main surface facing the first main surface;
- and
- a first bump electrode on the third main surface;
- wherein
- the first series arm resonator includes a first functional electrode on the third main surface;
- a first parallel arm resonator of the plurality of parallel arm resonators includes a second functional electrode on the third main surface;
- the first bump electrode is connected to the second functional electrode;
- the first substrate includes:
- a first planar electrode on a first dielectric layer of the plurality of dielectric layers and bonded to the first bump electrode;
- a second planar electrode on a second dielectric layer of the plurality of dielectric layers on a side of the second main surface with respect to the first dielectric layer and connected to the ground;
- and
- a plurality of via conductors connecting the first planar electrode and the second planar electrode;
- in a plan view of the first main surface, the first bump electrode is located between two via conductors of the plurality of via conductors connected to the first planar electrode;
- and
- the first parallel arm resonator has a highest resonant frequency of the plurality of parallel arm resonators.
An acoustic wave device comprising:
- a first series arm resonator in a series arm path connecting a first input/output terminal and a second input/output terminal;
- a plurality of parallel arm resonators connected between the series arm path and a ground;
- a first substrate including a first main surface and a second main surface facing each other, and a plurality of dielectric layers;
- a second substrate including a third main surface facing the first main surface;
- and
- a first bump electrode on the third main surface;
- wherein
- the first series arm resonator includes a first functional electrode on the third main surface;
- a first parallel arm resonator of the plurality of parallel arm resonators includes a second functional electrode on the third main surface;
- the first bump electrode is connected to the second functional electrode;
- the first substrate includes:
- a first planar electrode on a first dielectric layer of the plurality of dielectric layers and bonded to the first bump electrode;
- a second planar electrode on a second dielectric layer of the plurality of dielectric layers on a side of the second main surface with respect to the first dielectric layer and connected to the ground;
- and
- a plurality of via conductors connecting the first planar electrode and the second planar electrode;
- in a plan view of the first main surface, the first bump electrode is located between two via conductors of the plurality of via conductors connected to the first planar electrode;
- each of the first functional electrode and the second functional electrode is an interdigital transducer electrode;
- and
- the first parallel arm resonator has a smallest electrode finger pitch of the interdigital transducer electrode of the plurality of parallel arm resonators.
Dependencies are inferred from the claim text.