Plasma processing apparatus and method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorJeongil Mun
Life of this patent
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Abstract
Provided is a method of manufacturing a semiconductor device. The method comprises loading a substrate having a first diameter onto a substrate support within a plasma chamber, performing a plasma process on the substrate, unloading the substrate from the plasma chamber, loading a dummy substrate having a second diameter smaller than the first diameter onto the substrate support, and performing a plasma cleaning process on the dummy substrate to remove foreign substance in the plasma chamber.
Claims18
A method of manufacturing a semiconductor device, the method comprising:
- arranging a focus ring around an upper outer circumference of a substrate support;
- loading a substrate having a first diameter on the substrate support in a plasma chamber;
- performing a plasma process on the substrate;
- unloading the substrate from the plasma chamber;
- loading a dummy substrate having a second diameter smaller than the first diameter on the substrate support;
- and
- performing a plasma cleaning process on the dummy substrate to remove foreign substance in the plasma chamber,
- wherein the focus ring has an inner diameter that is less than the second diameter of the dummy substrate.
A method of manufacturing a semiconductor device, the method comprising:
- arranging a focus ring around an upper outer circumference of a substrate support;
- loading a substrate having a first diameter on the substrate support in a plasma chamber;
- performing a plasma dry etching process on the substrate;
- unloading the substrate from the plasma chamber;
- loading a dummy substrate having a second diameter smaller than the first diameter on the substrate support using a plurality of lift pins;
- and
- performing a plasma dry cleaning process on the dummy substrate to remove foreign substance in the plasma chamber,
- wherein the focus ring has an inner diameter that is less than the second diameter of the dummy substrate.
A method of manufacturing a semiconductor device, the method comprising:
- arranging a focus ring around an upper outer circumference of a substrate support;
- loading a substrate having a first diameter on a on the substrate support in a plasma chamber;
- performing a plasma dry etching process on the substrate;
- unloading the substrate from the plasma chamber;
- loading a dummy substrate having a second diameter smaller than the first diameter on the substrate support;
- and
- performing a plasma dry cleaning process on the dummy substrate to remove foreign substance in the plasma chamber,
- wherein loading the dummy substrate comprises raising a plurality of lift pins from within the substrate support, inserting upper end portions of the plurality of lift pins into a plurality of positioning grooves disposed on a lower surface of the dummy substrate, to align the dummy substrate, and lowering the plurality of lift pins to seat the dummy substrate on the substrate support such that the dummy substrate exposes an inner edge region of the focus ring, and
- wherein the focus ring has an inner diameter that is less than the second diameter of the dummy substrate.
Dependencies are inferred from the claim text.