Batch type substrate processing apparatus

A batch type substrate processing apparatus comprising:

• a reaction tube configured to provide a processing space in which a plurality of substrates are accommodated;
• and
• a plasma forming part having a discharge space, which is distinguished from the processing space by a partition wall extending in a longitudinal direction of the reaction tube, and configured to generate plasma in the discharge space by a plurality of electrodes, wherein the plurality of electrodes are disposed in a circumferential direction of the reaction tube with a rod shape extending in the longitudinal direction of the reaction tube,
• wherein the plurality of electrodes comprise:
• first and second power supply electrodes spaced apart from each other;
• and
• first and second ground electrodes provided between the first and second power supply electrodes in the discharge space to be spaced apart from the first and second power supply electrodes, wherein no electrodes are present between the first and second ground electrodes,
• wherein the plurality of electrodes are configured to generate capacitively coupled plasma (CCP) in each space between the first power supply electrode and the first ground electrode and between the second power supply electrode and the second ground electrode,
• wherein the first power supply electrode is closer to the first ground electrode than the second ground electrode such that a voltage can be induced to the first ground electrode by the voltage applied to the first power supply electrode, and
• wherein the second power supply electrode is closer to the second ground electrode than the first ground electrode such that a voltage can be induced to the second ground electrode by the voltage applied to the second power supply electrode.