Plasma chemical vapor deposition (CVD) apparatus and film forming method
AssigneeKioxia Corporation
InventorTakuya Hirohashi
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Abstract
An apparatus includes a process chamber, a stage, a shower head, a plasma generation circuit, and a partition wall. The stage places a substrate. The shower head faces the stage and supplies process gas to the substrate. The plasma generation circuit generates plasma between the shower head and the stage. The partition wall isolates a first space between the shower head and the stage from a second space on a side of the shower head opposite to a side of the stage with a predetermined first gap, such that a pressure in the second space is higher than a pressure in the first space in a state where the process gas is supplied from the shower head, a gas different from the process gas is supplied to the second space, and an inside of the first space is evacuated.
Claims20
A plasma chemical vapor deposition (CVD) apparatus comprising:
- a process chamber;
- a stage disposed in the process chamber and configured to place a substrate;
- a shower head facing the stage in the process chamber and configured to supply process gas to the substrate;
- a plasma generation circuit configured to generate plasma between the shower head and the stage with the shower head and the stage respectively serving as electrodes;
- and
- a first partition wall isolating a first space between the shower head and the stage in the process chamber from a second space in the process chamber on a side of the shower head opposite to a side of the stage with a predetermined first gap, such that a pressure in the second space is higher than a pressure in the first space in a state where the process gas is supplied from the shower head, a gas different from the process gas is supplied to the second space, and an inside of the first space is evacuated.
A plasma chemical vapor deposition (CVD) apparatus comprising:
- a process chamber having an outlet;
- a stage disposed in the process chamber and configured to place a substrate;
- a shower head facing the stage in the process chamber and configured to supply process gas to the substrate;
- a plasma generation circuit configured to generate plasma between the shower head and the stage with the shower head and the stage respectively serving as electrodes;
- and
- a partition wall which isolates a first space between the shower head and the stage in the process chamber from a second space on a side of the stage opposite to a side of the shower head in the process chamber with a predetermined gap, and in which a gas different from the process gas is supplied to the second space, and the gap is locally formed in a direction displaced from a direction from a center of the second space toward the outlet when viewed from above.
A film forming method comprising:
- supplying process gas to a first space between a stage on which a substrate is placed and a shower head which is disposed at a position facing the stage and from which the process gas is introduced;
- forming a state in which a pressure in a second space in a process chamber on a side of the shower head opposite to a side of the stage is higher than a pressure in the first space in the process chamber;
- and
- forming a predetermined film on the substrate by generating plasma between the shower head and the stage by using the shower head and the stage respectively as electrodes in the state where the pressure in the second space is higher than the pressure in the first space.
Dependencies are inferred from the claim text.