Substrate processing apparatus using plasma phase shift

A substrate processing system, the system comprising:

• a first reaction chamber, a second reaction chamber, a third reaction chamber, and a fourth reaction chamber disposed on a platform, wherein each of the reaction chambers is configured to process substrates;
• at least one generator coupled to the first reaction chamber, second reaction chamber, third reaction chamber, and fourth reaction chamber, wherein the system is configured to provide a first plasma power comprising a first phase to the first reaction chamber, a second plasma power comprising a second phase to the second reaction chamber, a third plasma power comprising a third phase to the third reaction chamber, and a fourth plasma power comprising a fourth phase to the fourth reaction chamber;
• and
• at least one control circuit connected to the at least one generator, wherein the at least one control circuit is configured to independently control the first phase, the second phase, the third phase, and the fourth phase;
• wherein the second phase is between 185 to 205 degrees offset from the first phase.

A substrate processing system, the system comprising:

• a first reaction chamber, a second reaction chamber, a third reaction chamber, and a fourth reaction chamber disposed on a platform, wherein each of the reaction chambers is configured to process substrates;
• at least one generator coupled to the first reaction chamber, second reaction chamber, third reaction chamber, and fourth reaction chamber, wherein the system is configured to provide a first plasma power comprising a first phase to the first reaction chamber, a second plasma power comprising a second phase to the second reaction chamber, a third plasma power comprising a third phase to the third reaction chamber, and a fourth plasma power comprising a fourth phase to the fourth reaction chamber;
• and
• at least one control circuit connected to the at least one generator, wherein the at least one control circuit is configured to independently control the first phase, the second phase, the third phase, and the fourth phase;
• wherein the second phase is between 80 and 100 degrees offset from the first phase, the third phase is between 170 and 190 degrees offset from the first phase, and the fourth phase is between 260 and 280 degrees offset from the first phase.