Semiconductor storage device for comparing reference voltages

A semiconductor storage device, comprising:

• at least one first memory cell of a plurality of first memory cells, wherein
• the at least one first memory cell is connected in parallel between a first voltage supply line and a second voltage supply line,
• the first voltage supply line supplies a first voltage, and
• the second voltage supply line supplies a second voltage different from the first voltage;
• and
• at least one second memory cell of a plurality of second memory cells, wherein
• the at least one second memory cell is connected in parallel between the second voltage supply line and a third voltage supply line,
• the third voltage supply line supplies the first voltage,
• each of the plurality of first memory cells includes:
• a first storage element having a first resistance value corresponding to one of a first status or a second status;
• and
• a first cell transistor connected between the first storage element and the first voltage supply line, and
• each of the plurality of second memory cells includes:
• a second storage element having a second resistance value corresponding to one of the first status or the second status;
• and
• a second cell transistor connected between the second storage element and the third voltage supply line;
• a reference voltage generation unit configured to generate a reference voltage having a voltage level between a third voltage and a fourth voltage, wherein
• the third voltage is generated based on a first biasing operation on each of the first storage element and the second storage element,
• the first biasing operation on the each of the first storage element and the second storage element is based on:
• the first voltage,
• the second voltage,
• the first resistance value of the first storage element that corresponds to the first status, and
• the second resistance value of the second storage element that corresponds to the first status,
• the fourth voltage is generated based on a second biasing operation on the each of the first storage element and the second storage element,
• the second biasing operation on the each of the first storage element and the second storage element is based on;
• the first voltage,
• the second voltage,
• the first resistance value of the first storage element that corresponds to the second status, and
• the second resistance value of the second storage element that corresponds to the second status;
• and
• a comparison unit configured to compare the reference voltage with a fifth voltage, wherein
• the fifth voltage is generated based on a third biasing operation on one of the first storage element or the second storage element,
• the third biasing operation on the one of the first storage element or the second storage element is biased based on each of the first voltage and the second voltage,
• the reference voltage generation unit includes:
• a first reference voltage generation unit that is connected between the first voltage supply line and the second voltage supply line, wherein the first reference voltage generation unit is configured to generate, based on a reading operation of the at least one second memory cell, the reference voltage;
• and
• a second reference voltage generation unit that is connected between the second voltage supply line and the third voltage supply line, wherein
• the second reference voltage generation unit is configured to generate, based on a reading operation of the at least one first memory cell, the reference voltage, and
• the second voltage supply line is between the first reference voltage generation unit and the second reference voltage generation unit.