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US 12,681,388 B2Granted
Positive resist composition and pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Masahiro Fukushima
Life of this patent
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Abstract
A resist composition comprising a base polymer comprising repeat units containing a tertiary ester group having a double or triple bond and a halogenated aromatic group exhibits a high sensitivity and resolution and forms a pattern of satisfactory profile having reduced edge roughness or size variation.
Claims11
A positive resist composition comprising a base polymer comprising repeat units having the formula (a):
- wherein RA is hydrogen or methyl,
- X1 is a single bond, phenylene group, naphthylene group or a C1-C12 linking group which contains at least one moiety selected from an ester bond, ether bond and lactone ring,
- R is a group having the formula (a1):
- wherein R1 is a C1-C6 straight or branched aliphatic hydrocarbyl group which may contain oxygen, R2 is a C2-C6 straight or branched, unsaturated aliphatic hydrocarbyl group which may contain oxygen, R1 and R2 bond together to form a C5-C12 ring with the carbon atom to which they are attached,
- R3 is a halogen atom, cyano group, C1-C4 fluorinated alkyl group, C1-C4 fluorinated alkoxy group, or C1-C4 fluorinated alkylthio group,
- R4 is a C1-C4 alkyl group,
- m is an integer of 1 to 5, n is an integer of 0 to 4, and m+n is from 1 to 5, and
- the broken line designates a valence bond.
5 more elements
Dependencies are inferred from the claim text.