Photoresist compositions for EUV and methods for manufacturing semiconductor devices using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJuhyeon Park, Ji Yup Kim, Jinjoo Kim, Hyunwoo Kim, Sung Hwan Park
Life of this patent
Estimating the term…
Abstract
Provided are photoresist compositions for EUV and methods for manufacturing a semiconductor device using the same. The photoresist compositions for EUV include a photosensitive resin, a photoacid generator, and an additive, wherein the additive comprises a copolymer including a first repeating unit that includes a fluoroalkyl group or hydrocarbon group substituted with one or more fluoroalkyl group(s), and a second repeating unit that includes a sulfonic acid group and an amide group.
Claims20
A photoresist composition for EUV comprising:
- a photosensitive resin;
- a photoacid generator;
- and
- an additive,
- wherein the additive comprises a copolymer including a first repeating unit and a second repeating unit, wherein the first repeating unit has a structure of Chemical formula 1-1
- wherein R1 is a hydrogen atom, a hydroxy group, or a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms, and Rf1 is a fluoroalkyl group or a hydrocarbon group substituted with one or more fluoroalkyl group(s);
- and
- wherein the second repeating unit has a structure of Chemical formula 2
- wherein R2 is a hydrogen atom, a hydroxy group, or a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms, and Rb is a single bond, a substituted or unsubstituted alkylene group having 1 to 10 carbon atoms, a substituted or unsubstituted arylene group having 6 to 18 carbon atoms, a substituted or unsubstituted arylalkylene group having 6 to 18 carbon atoms, or a substituted or unsubstituted alkylarylene group having 6 to 18 carbon atoms.
A photoresist composition for EUV comprising:
- a photosensitive resin;
- a photoacid generator;
- a photo-decomposable quencher;
- and
- an additive,
- wherein the additive comprises a copolymer including a first repeating unit and a second repeating unit, wherein the first repeating unit has a structure of Chemical formula 1-2
- wherein Rf2 is a fluoroalkyl group or is a hydrocarbon group substituted with one or more fluoroalkyl group(s);
- and
- wherein the second repeating unit has a structure of Chemical formula 2
- wherein R2 is a hydrogen atom, a methyl group, or a trifluoromethyl group, and
- Rb is a single bond, a substituted or unsubstituted alkylene group having 1 to 10 carbon atoms, a substituted or unsubstituted arylene group having 6 to 18 carbon atoms, a substituted or unsubstituted arylalkylene group having 6 to 18 carbon atoms, or a substituted or unsubstituted alkylarylene group having 6 to 18 carbon atoms.
A method for manufacturing a semiconductor device, the method comprising:
- forming a target film on a substrate;
- forming a photoresist film on the target film;
- performing an exposure process on the photoresist film;
- performing a developing process on the photoresist film to form a photoresist pattern;
- and
- performing an etching process on the target film using the photoresist pattern as an etching mask,
- wherein the photoresist film comprises a photosensitive resin, a photoacid generator, and an additive, and
- wherein the additive comprises a copolymer including a first repeating unit and a second repeating unit, wherein the first repeating unit has a structure of Chemical formula 1-1
- wherein R1 is a hydrogen atom, a hydroxy group, or a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms, and Rf is a fluoroalkyl group or a hydrocarbon group substituted with one or more fluoroalkyl group(s);
- and
- wherein the second repeating unit has a structure of Chemical formula 2
- wherein R2 is a hydrogen atom, a hydroxy group, or a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms, and
- Rb is a single bond, a substituted or unsubstituted alkylene group having 1 to 10 carbon atoms, a substituted or unsubstituted arylene group having 6 to 18 carbon atoms, a substituted or unsubstituted arylalkylene group having 6 to 18 carbon atoms, or a substituted or unsubstituted alkylarylene group having 6 to 18 carbon atoms.
Dependencies are inferred from the claim text.