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US 12,681,384 B2Granted
Photoresist composition
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAn-Ren Zi, Ching-Yu Chang
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, exposing the photoresist layer to an EUV radiation, and developing the exposed photoresist layer. The photoresist layer has a composition including a metal complex including a metallic core and at least one ligand bonded to the metallic core. The at least one ligand includes an alkenyl group, an alkynyl group, or a combination thereof.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a photoresist layer over a substrate;
- exposing the photoresist layer to an EUV radiation;
- and
- developing the exposed photoresist layer, wherein the photoresist layer has a composition comprising:
- a metal complex comprising a metallic core and at least one ligand bonded to the metallic core, wherein the at least one ligand comprises an alkenyl group, an alkynyl group, or a combination thereof, the at least one ligand comprises a saturated carbon directly bonded to the metallic core, the saturated hydrocarbon is bonded directly to a carbonyl group and bonded to one of an alkyl group and an alkenyl group, the metal complex comprising the metallic core and the at least one ligand comprising the alkenyl group, the alkynyl group, or the combination thereof is selected from the group consisting of following formulae (A1), (A2), (A4), (A7) and (A13):
- wherein A in the formulae (A1), (A2), (A4) and (A7) is the metallic core of the metal complex, and a moiety bonded to A is the at least one ligand of the metal complex.
3 more elements
An extreme ultraviolet lithography (EUVL) method, comprising:
- turning on a droplet generator to eject a metal droplet toward a zone of excitation in front of a collector;
- turning on a laser source to emit a laser toward the zone of excitation, such that the metal droplet is heated by the laser to generate an EUV radiation;
- guiding the EUV radiation, by using one or more first optics, toward a reflective mask in an exposure device;
- and
- guiding the EUV radiation, by using one or more second optics, reflected from the reflective mask toward a photoresist coated substrate in the exposure device,
- wherein the photoresist has a composition comprising:
- a metal complex comprising a metallic core and at least one ligand bonded to the metallic core, wherein the at least one ligand comprises a saturated carbon directly bonded to the metallic core, the saturated hydrocarbon is bonded directly to a carbonyl group and bonded to one of an alkyl group and an alkenyl group, the metal complex comprising the metallic core and the at least one ligand comprising the alkenyl group is selected from the group consisting of following formulae (A1), (A2), (A4) and (A7):
- wherein A in the formulae (A1), (A2), (A4) and (A7) is the metallic core of the metal complex, and a moiety bonded to A is the at least one ligand of the metal complex.
5 more elements
A photoresist, having a composition comprising:
- a metal complex configured to be used in extreme ultraviolet (EUV) radiation lithography and comprising a metallic core and at least one ligand bonded to the metallic core, wherein the metal complex is selected from the group consisting of following formulae (A1), (A2), (A4), (A5), (A7), (A8), (A13), (A14) and (A17):
- A is the metallic core of the metal complex, and a moiety bonded to A is the at least one ligand of the metal complex, the at least one ligand comprises a saturated hydrocarbon directly bonded to the metallic core, the saturated hydrocarbon is bonded to one of an alkyl group and an alkenyl group and directly bonded to a carbonyl group.
Dependencies are inferred from the claim text.