Corner rounding method of OPC pattern based on deep learning, and OPC method and mask manufacturing method including the corner rounding method

An optical proximity correction (OPC) method comprising:

• generating a retarget layout including straight edges;
• performing OPC on the retarget layout such that an OPCed layout is generated;
• performing an optical rule check (ORC) on the OPCed layout;
• determining whether there is a defect in the OPCed layout based on a result of the ORC;
• determining the OPCed layout to be a final OPCed layout based on the determination that there is no defect;
• and
• etching a semiconductor element based on the final OPCed layout,
• wherein at least one of the retarget layout or the OPCed layout is generated based on a corner rounding of a deep learning-based OPC pattern,
• wherein the corner rounding of the deep learning-based OPC pattern comprises:
• using a first transform model generated through deep learning with a first square layout of an etching pattern and a first contour of the etching pattern, wherein the first square layout corresponds to the first contour, or
• using a second transform model generated through the deep learning with a second square layout of a photoresist (PR) pattern and a second contour of the PR pattern,
• wherein the second square layout corresponds to the second contour.

A mask manufacturing method comprising:

• generating a retarget layout including straight edges;
• performing an optical proximity correction (OPC) on the retarget layout such that an OPCed layout is generated;
• performing an optical rule check (ORC) on the OPCed layout;
• determining whether there is a defect in the OPCed layout based on a result of the ORC;
• and
• determining the OPCed layout to be a final OPCed layout based on the determination that there is no defect;
• transmitting an image of the final OPCed layout as mask tape-out (MTO) design data;
• preparing mask data based on the MTO design data;
• and
• exposing a substrate to light, based on the mask data,
• wherein at least one of the retarget layout or the OPCed layout is generated based on a corner rounding of a deep learning-based OPC pattern,
• wherein the corner rounding of the deep learning-based OPC pattern comprises:
• using a first transform model generated through deep learning with a first square layout of an etching pattern and a first contour of the etching pattern, wherein the first square layout corresponds to the first contour, or
• using a second transform model generated through the deep learning with a second square layout of a photoresist (PR) pattern and a second contour of the PR pattern,
• wherein the second square layout corresponds to the second contour.