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US 12,681,353 B2Granted
Optical device fabrication
AssigneeView Operating Corporation
InventorsYashraj Bhatnagar, Robert T. Rozbicki, Rao Mulpuri
Life of this patent
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Abstract
Transparent conductive coatings are polished using particle slurries in combination with mechanical shearing force, such as a polishing pad. Substrates having transparent conductive coatings that are too rough and/or have too much haze, such that the substrate would not produce a suitable optical device, are polished using methods described herein. The substrate may be tempered prior to, or after, polishing. The polished substrates have low haze and sufficient smoothness to make high-quality optical devices.
Claims23
A method comprising:
- (a) polishing a surface of a first transparent conducting oxide layer disposed on a glass substrate, a time and amount of the polishing having been determined by periodically measuring, during a prior polishing operation of a sample, a sheet resistance of the sample, the determined time and amount of the polishing the surface providing a resulting sheet resistance of the first transparent conducting oxide layer within or below the range of 5 to 30 ohms per square;
- (b) cleaning the polished surface and depositing an electrochromic layer in one or more portions on the cleaned polished surface, the electrochromic layer comprising tungsten oxide or doped tungsten oxide, wherein the electrochromic layer comprises a region comprising a greater than stoichiometric amount of oxygen;
- (c) depositing a counter electrode layer on the region to form a device stack, wherein the counter electrode layer comprises nickel oxide or nickel tungsten oxide, each optionally doped, the region being located at an interface between the electrochromic layer and the counter electrode layer;
- (d) applying lithium to the counter electrode layer;
- and
- (e) heating the device stack to convert the region to an ion conducting and electrically insulating region between the electrochromic layer and the counter electrode layer.
3 more elements
A method comprising:
- (a) polishing a surface of a first transparent conducting oxide layer disposed on a glass substrate, a time and amount of the polishing having been determined by periodically measuring, during a prior polishing operation of a sample, a sheet resistance of the sample, the determined time and amount of the polishing the surface providing a resulting sheet resistance of the first transparent conducting oxide layer within or below the range of 5 to 30 ohms per square;
- (b) cleaning the polished surface and depositing an electrochromic layer in one or more portions on the cleaned polished surface, the electrochromic layer comprising tungsten oxide or doped tungsten oxide, wherein the electrochromic layer comprises a region comprising a greater than stoichiometric amount of oxygen;
- (c) depositing a counter electrode layer on the region to form a device stack, wherein the counter electrode layer comprises nickel oxide or nickel tungsten oxide, each optionally doped, the region being located at an interface between the electrochromic layer and the counter electrode layer;
- (d) applying lithium to the counter electrode layer;
- and
- (e) heating the device stack to convert the region to an ion conducting and electrically insulating region between the electrochromic layer and the counter electrode layer,
- wherein the sample is a sample of the first transparent conducting oxide layer.
4 more elements
Dependencies are inferred from the claim text.