Time-domain optical metrology and inspection of semiconductor devices
AssigneeNova Ltd.
InventorsGilad Barak, Amir Sagiv, Yishai Schreiber, Jacob Ofek, Zvi Gorohovsky, Daphna Peimer
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Abstract
A semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting a relevant and irrelevant portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the relevant portion of the time-domain representation.
Claims13
A method for semiconductor device metrology, the method comprising:
- creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device;
- wherein the semiconductor device comprises multiple semiconductor device portions that are positioned at different z-axis locations, the multiple semiconductor device portions comprise the patterned structure;
- selecting one or more relevant portions of time-domain representation and at least one irrelevant portion of the time domain representation;
- wherein the selecting is based, at least in part, on a sensitivity of the method to at least one attribute of at least one semiconductor device portion of the multiple semiconductor device portion;
- determining one or more measurements of one or more parameters of interest of the patterned structure by performing processing using the one or more relevant portions of the time-domain representation.
A non-transitory computer readable medium that stores instructions for:
- creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device;
- wherein the semiconductor device comprises multiple semiconductor device portions that are positioned at different z-axis locations, the multiple semiconductor device portions comprise the patterned structure;
- selecting one or more relevant portions of time-domain representation and at least one irrelevant portion of the time domain representation;
- wherein the selecting is based, at least in part, on a sensitivity of the instructions to at least one attribute of at least one semiconductor device portion of the multiple semiconductor device portion;
- and
- determining one or more measurements of one or more parameters of interest of the patterned structure by performing processing using the one or more relevant portions of the time-domain representation;
- and
- adjusting one or more parameters of an optical metrology tool based on the determined measurements.
Dependencies are inferred from the claim text.