Process and apparatus to remove metal-containing films from a chamber
AssigneeApplied Materials, Inc.
InventorsKelvin Chan, Ruiying Hao
Life of this patent
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Abstract
Embodiments disclosed herein include methods for removing a metal containing layer from a chamber of a tool. In an embodiment, the method comprises generating a remote plasma in the tool. The method may continue with flowing reactive species from the remote plasma into the chamber, and flowing a hydrocarbon gas into the chamber. In an embodiment, the method may include reacting the reactive species with the hydrocarbon gas within the chamber. In an embodiment, the method may further comprise etching the metal-containing material in the chamber.
Claims11
A method for removing a metal-containing material from a chamber of a tool, comprising:
- generating a remote plasma in the tool;
- flowing reactive species from the remote plasma into the chamber, wherein a source gas for the remote plasma comprises hydrogen and oxygen;
- flowing a hydrocarbon gas into the chamber, wherein the hydrocarbon gas comprises one or more of an alkene, an alkyne, or an aromatic hydrocarbon;
- reacting the reactive species with the hydrocarbon gas within the chamber;
- and
- etching the metal-containing material in the chamber, wherein the metal-containing material comprises one or more of indium, tin, zinc or cadmium.
A method for removing a metal-containing material from a chamber of a tool, comprising:
- generating a remote plasma using a first source gas comprising hydrogen;
- flowing reactive species from the remote plasma into a chamber through first channels of a dual channel showerhead, wherein a source gas for the remote plasma comprises hydrogen and oxygen;
- injecting a second source gas comprising a hydrocarbon into the chamber through second channels of the dual channel showerhead, wherein the hydrocarbon comprises one or more of an alkene, an alkyne, or an aromatic hydrocarbon;
- reacting the reactive species with the second source gas to form CXHY radicals within the chamber;
- and
- etching the metal-containing material in the chamber, wherein etch byproducts comprise CXHYM, wherein M is a metal selected from the group consisting of indium, tin, zinc and cadmium.
Dependencies are inferred from the claim text.