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US 12,679,998 B2Granted
Soluble metal oxide anion CMP slurry
AssigneeDuPont Electronic Materials Holding, Inc.
InventorsYi Guo, Arthur W. Martin
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Abstract
The invention provides a chemical mechanical polishing solution for metal and metal nitride substrates comprising: a solvent; at least one abrasive with a Mohs hardness of at least 8; and at least one soluble metal oxide anion wherein the metal is selected from vanadium, niobium, tantalum, chromium, molybdenum and tungsten.
Claims10
A chemical mechanical polishing solution for metal and metal nitride substrates comprising:
- a solvent;
- functionalized carbon-based particles having oxygen-containing functional groups, the functionalized carbon-based particles having oxygen-containing functional groups react with a peroxy moiety to increase oxygen to carbon atomic ratio on the functionalized carbon-based particles, the functionalized carbon-based particles containing at least 10 weight percent of an sp3-containing structure, wherein the functionalized carbon-based particles include at least 0.01 atomic percent oxygen and wherein a surface of the functionalized carbon-based particles has an atomic oxygen to carbon ratio of at least 0.01;
- and
- at least one soluble metal oxide anion wherein the metal is selected from vanadium, niobium, tantalum, chromium, molybdenum and tungsten.
1 more element
Dependencies are inferred from the claim text.