Substrate processing apparatus and substrate processing method

A substrate processing apparatus, comprising:

• a platen comprising a light generator configured to generate light, and an optical window configured to allow the light to pass therethrough;
• a transparent polishing pad on the platen, the transparent polishing pad comprising an upper transparent surface configured to contact and polish a semiconductor substrate, wherein the light generator is configured to generate the light such that the light passes through the transparent polishing pad and proceeds towards the semiconductor substrate;
• a substrate holder configured to fix the semiconductor substrate on the transparent polishing pad and press a surface of the semiconductor substrate onto the upper transparent surface of the transparent polishing pad;
• a slurry supplier comprising a slurry and configured to supply the slurry between the semiconductor substrate and the transparent polishing pad, the slurry comprising a light blocking material that is configured to block the light, and the slurry further comprising abrasive particles that are configured to be activated by accepting electrons generated, based on the light, by a photocatalyst within the slurry;
• and
• a pad conditioner configured to distribute the slurry in a horizontal direction on the transparent polishing pad,
• wherein the light generator is configured to uniformly radiate the light towards the semiconductor substrate, across the surface of the semiconductor substrate, such that the light passes through the upper transparent surface of the transparent polishing pad, causes the photocatalyst to generate the electrons, and is blocked by the light blocking material,
• wherein the semiconductor substrate has an uneven structure comprising a bottom surface and protrusions protruding from the bottom surface,
• wherein the slurry supplier is configured to supply the slurry such that the light blocking material is between the protrusions, the light blocking material configured to block the light from being irradiated to the photocatalyst, which is between the protrusions, thereby preventing the photocatalyst between the protrusions from generating electrons and preventing the abrasive particles, which are between the protrusions, from being activated by accepting electrons, and
• wherein the abrasive particles between the protrusions and the transparent polishing pad are configured to be activated such that the abrasive particles polish the protrusions.

A substrate processing apparatus comprising:

• a substrate support portion that comprises a platen and a transparent polishing pad on the platen, the platen comprising a light generator configured to generate light that passes through the transparent polishing pad and proceeds towards a semiconductor substrate on the substrate support portion, and the transparent polishing pad comprising a transparent surface that is configured to contact and polish the semiconductor substrate;
• a substrate holder configured to fix the semiconductor substrate such that the semiconductor substrate is in contact with the substrate support portion, and the substrate holder is further configured to contact the transparent surface of the transparent polishing pad and a surface of the semiconductor substrate, and polish the surface of the semiconductor substrate via the transparent polishing pad;
• a slurry supplier comprising a slurry and configured to supply the slurry between the semiconductor substrate and the transparent polishing pad, the slurry comprising a light blocking material that is configured to block the light, and the slurry further comprising abrasive particles that are configured to be activated by electrons generated, based on the light, by a photocatalyst within the slurry;
• and
• a pad conditioner configured to dispense the slurry on the substrate support portion and roughen the transparent surface of the transparent polishing pad to maintain the transparent polishing pad with a constant surface roughness capable of polishing the semiconductor substrate,
• wherein the abrasive particles further comprise cerium oxide (CeO2), and the abrasive particles are configured to be activated by the electrons generated by the photocatalyst such that tetravalent cerium ions (Ce4+) on a surface of the cerium oxide are reduced to trivalent cerium ions (Ce3+), and
• wherein the light generator is configured to uniformly radiate the light towards the semiconductor substrate, across the surface of the semiconductor substrate, such that the light passes through the transparent surface of the transparent polishing pad, causes the photocatalyst to generate the electrons, and is blocked by the light blocking material,
• wherein the semiconductor substrate has an uneven structure comprising a bottom surface and protrusions protruding from the bottom surface,
• wherein the slurry supplier is configured to supply the slurry such that the light blocking material is between the protrusions, the light blocking material configured to block the light from being irradiated to the photocatalyst, which is between the protrusions, thereby preventing the photocatalyst between the protrusions from generating electrons and preventing the abrasive particles, which are between the protrusions, from being activated by accepting electrons, and
• wherein the abrasive particles between the protrusions and the transparent polishing pad are configured to be activated such that the abrasive particles polish the protrusions.