Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• an insulation member having a first face;
• a columnar electrode penetrating the insulation member in a direction approximately perpendicular to the first face, the columnar electrode having a columnar electrode member and a first metal layer of at least one layer which covers an outer circumference of the columnar electrode member and which extends until becoming exposed from the first face;
• a member which is provided on the first face and which is arranged so as to overlap with at least a part of the first metal layer that is exposed from the first face as viewed from a direction approximately perpendicular to the first face;
• and
• an electrode pad which is provided on the first face so as to cover the member and which is electrically connected to the columnar electrode member,
• wherein the member is annular in shape as viewed from the direction,
• an outer diameter of the member is smaller than an outer diameter of the electrode pad,
• the columnar electrode includes, at an upper end thereof, a depression having a side face being the first metal layer and a bottom being the columnar electrode member, and
• the electrode pad extends to an inside of the depression so as to be electrically connected to the columnar electrode member.