Ultraviolet light emitting diode and manufacturing method therefor

An ultraviolet light emitting diode, comprising a substrate and a semiconductor stacked layer disposed on the substrate;

• wherein the semiconductor stacked layer comprises a first semiconductor layer facing towards the substrate, a light emitting layer arranged on a side of the first semiconductor layer facing away from the substrate, and a second semiconductor layer arranged on a side of the light emitting layer facing away from the first semiconductor layer;
• wherein at least one first laser cutting line and at least one second laser cutting line are disposed in the substrate, each of the at least one first laser cutting line is closer to the first semiconductor layer relative to each of the at least one second laser cutting line, and laser scratches of the at least one first laser cutting line are quasi-circular scratches, each of the quasi-circular scratches has a longer axis and a shorter axis, and a ratio of the shorter axis to the longer axis is less than or equal to 1:1.5;
• wherein laser scratches of the at least one second laser cutting line are strip-shaped scratches, and a spacing between each of the at least one first laser cutting line and a surface of the semiconductor stacked layer facing towards the substrate is greater than or equal to 30 μm.