Semiconductor structure with superlattices

A semiconductor structure, comprising:

• a first conductivity type region comprising a first superlattice;
• an i-type active region adjacent to the first conductivity type region, the i-type active region comprising an i-type superlattice;
• and
• a second conductivity type region, wherein the i-type active region is between the first conductivity type region and the second conductivity type region;
• wherein:
• the first conductivity type region is a p-type region and the second conductivity type region is an n-type region, or the first conductivity type region is an n-type region and the second conductivity type region is a p-type region;
• the first superlattice is comprised of a plurality of first unit cells;
• the i-type superlattice is comprised of a plurality of i-type unit cells;
• each of the plurality of first unit cells comprises a first set of at least two distinct substantially single crystal layers;
• each of the plurality of i-type unit cells comprises a second set of at least two distinct substantially single crystal layers;
• and
• an average alloy content of the plurality of the first unit cells, and the i-type unit cells is constant along a growth direction;
• wherein the structure is configured such that electrons and holes in the structure recombine to generate a spectrum of light, and a longest wavelength peak of the spectrum of light corresponds to a transition between electron and hole confined energy states within the i-type superlattice.