Silicon solar cell and module
AssigneeLongi Green Energy Technology Co., Ltd.
InventorsYupeng Jin, Long Yu, Hongbo Tong
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Abstract
The present application relates to a silicon solar cell. In one example, a silicon solar cell includes a silicon substrate including an antimony element; and a carrier separation layer, formed on the silicon substrate. At least some regions of the carrier separation layer on a side close to the silicon substrate have an antimony-containing layer. The antimony-containing layer includes the antimony element. A peak concentration of the antimony element in the antimony-containing layer is a1, and a1 is equal to or greater than 1E13 atoms/cm3.
Claims20
A silicon solar cell, comprising:
- a silicon substrate comprising an antimony element;
- and
- a carrier separation layer formed on the silicon substrate,
- wherein at least some regions of the carrier separation layer on a side close to the silicon substrate have an antimony-containing layer, wherein the antimony-containing layer comprising the antimony element,
- wherein a concentration of the antimony element in the antimony-containing layer of the carrier separation layer decreases in a direction from the side close to the silicon substrate to a side facing away from the silicon substrate,
- wherein a peak concentration of the antimony element in the antimony-containing layer is a1, a1 being equal to or greater than 1E13 atoms/cm3,
- wherein the carrier separation layer is selected from a doped semiconductor layer, a molybdenum oxide layer, or a PEDOT:PSS layer, and
- wherein when the carrier separation layer is the doped semiconductor layer, the silicon solar cell comprises an interface passivation layer between the silicon substrate and the carrier separation layer.
A solar cell module, comprising a silicon solar cell comprising:
- a silicon substrate comprising an antimony element;
- and
- a carrier separation layer formed on the silicon substrate,
- wherein at least some regions of the carrier separation layer on a side close to the silicon substrate have an antimony-containing layer, wherein the antimony-containing layer comprising the antimony element,
- wherein a concentration of the antimony element in the antimony-containing layer of the carrier separation layer decreases in a direction from the side close to the silicon substrate to a side facing away from the silicon substrate,
- wherein a peak concentration of the antimony element in the antimony-containing layer is a1, a1 being equal to or greater than 1E13 atoms/cm3,
- wherein the carrier separation layer is selected from a doped semiconductor layer, a molybdenum oxide layer, or a PEDOT:PSS layer, and
- wherein when the carrier separation layer is the doped semiconductor layer, the silicon solar cell comprises an interface passivation layer between the silicon substrate and the carrier separation layer.
Dependencies are inferred from the claim text.