Imaging element and semiconductor element

A light detecting device, comprising:

• a first substrate including a photoelectric conversion section and a charge-holding section that holds charges transferred from the photoelectric conversion section;
• and
• a second substrate including an amplification transistor that generates a signal of a voltage corresponding to a level of charges held in the charge-holding section,
• wherein a gate electrode of the amplification transistor is electrically coupled to the charge-holding section,
• wherein the gate electrode of the amplification transistor has a first portion and a second portion,
• wherein the first portion is perpendicular to the second portion, and
• wherein the first portion of the gate electrode of the amplification transistor contacts the charge-holding section.

A light detecting device, comprising:

• a first substrate including a photoelectric conversion section and a charge-holding section that holds charges transferred from the photoelectric conversion section;
• and
• a second substrate including an amplification transistor that generates a signal of a voltage corresponding to a level of charges held in the charge-holding section,
• wherein a gate electrode of the amplification transistor is electrically coupled to the charge-holding section,
• wherein the gate electrode of the amplification transistor has a first portion and a second portion,
• wherein the first portion is perpendicular to the second portion,
• wherein the first substrate includes a first wiring layer, and
• wherein the first wiring layer includes a first wiring that contacts the second portion of the gate electrode of the amplification transistor.