Thin film transistor manufactured by low-temperature process, manufacturing method of the same transistor, transistor device and electronic device including the same transistor

A thin film transistor, comprising:

• a gate electrode;
• a first insulating layer formed on the gate electrode;
• a second insulating layer formed on the first insulating layer, the second insulating layer comprising an oxide of an element having a bond-dissociation energy with oxygen (O) of 500 KJ/mol or more;
• a channel layer comprising a semiconductor material formed on the second insulating layer;
• and
• a source electrode and a drain electrode formed on the first insulating layer, the source electrode and the drain electrode located at both ends of the channel layer so as to be not electrically connected directly to each other, but electrically connected through the channel layer,
• wherein the channel layer has a gradient of oxygen concentration in which the concentration of oxygen increases as it goes into the interior from the vicinity of an interface in contact with the second insulating layer.