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US 12,677,444 B2Granted
Semiconductor device including amorphous oxide semiconductor channel layer
AssigneeSamsung Electronics Co., Ltd.
InventorsKiseok Lee, Keunnam Kim, Hui-Jung Kim, Min Hee Cho
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Abstract
A semiconductor device includes a substrate, a gate electrode on the substrate, a channel layer between the substrate and the gate electrode, the channel layer including an amorphous oxide semiconductor, and a width of the gate electrode being greater than a width of the channel layer, a first conductive electrode connected to a first side surface of the channel layer, and a second conductive electrode connected to a second side surface of the channel layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- a gate electrode on the substrate;
- a channel layer between the substrate and the gate electrode, the channel layer including an amorphous oxide semiconductor, and a width of the gate electrode being greater than a width of the channel layer;
- a first conductive electrode on the substrate, including a source region contacting a first side surface of the channel layer and a first conductive via extending from the source region;
- and
- a second conductive electrode on the substrate, including a drain region contacting a second side surface of the channel layer and a second conductive via extending from the drain region,
- wherein the source region and the first conductive via are of a single body, and
- wherein the drain region and the second conductive via are of a single body.
5 more elements
A semiconductor device, comprising:
- a substrate;
- a gate electrode on the substrate;
- a channel layer between the substrate and the gate electrode, the channel layer including an amorphous oxide semiconductor, and a width of the channel layer progressively decreasing from a bottom surface of the channel layer toward a top surface of the channel layer;
- a first conductive electrode on the substrate, including a source region contacting a first side surface of the channel layer and a first conductive via extending from the source region;
- and
- a second conductive electrode on the substrate, including a drain region contacting a second side surface of the channel layer and a second conductive via extending from the drain region,
- wherein the source region and the first conductive via are of a single body,
- wherein the drain region and the second conductive via are of a single body, and
- wherein at least one of the first conductive electrode and the second conductive electrode extends horizontally to a position under the gate electrode to vertically overlap with the gate electrode.
6 more elements
A semiconductor device, comprising:
- a substrate;
- a first conductive electrode on the substrate, the first conductive electrode including a source region and a first conductive via;
- a second conductive electrode on the substrate, the second conductive electrode including a drain region and a second conductive via;
- a channel layer on the substrate, the channel layer being between the first conductive electrode and the second conductive electrode;
- a gate electrode on three different surfaces of the channel layer, a width of the channel layer being less than a width of the gate electrode;
- a gate oxide layer between the channel layer and the gate electrode, and between the substrate and the gate electrode;
- and
- an insulating layer on the substrate and covering the first conductive electrode, the second conductive electrode, the channel layer, and the gate electrode, the first conductive via and the second conductive via penetrating the insulating layer.
5 more elements
Dependencies are inferred from the claim text.