Enhancing the quality factor of planar capacitors without impacting the resonance frequency

A device, comprising:

• a first conductor electrode separated from a second conductor electrode by a dielectric medium to operate as a metal-insulator-metal capacitor with a radio frequency ground plane;
• a physical interconnect overlapping area aligned with a periphery of the radio frequency ground plane to facilitate electrical surface current flow between the first conductor and the second conductor to reduce a surface current density of the metal-insulator-metal capacitor, wherein a resonance frequency of the device is based on a size of the physical interconnect overlapping area;
• and
• a radio frequency port section comprising an angled conductor configured to couple radio frequency signals to the device, wherein a shape of the angled conductor determines an enhanced device quality factor relative to a non-angled conductor, and wherein the device quality factor is substantially independent of at least one of:
• the resonance frequency of the device, or
• a capacitance value of the device, wherein the physical interconnect overlapping area is substantially centered substantially opposite the radio frequency port section.

A capacitor, comprising:

• a first conductor overlapping with a dielectric layer coupled to a physical interconnect overlapping area overlapping with a second conductor that is coupled to a substrate, the first conductor electrically coupled to the second conductor via an array of interconnects through the dielectric layer comprised in the physical interconnect overlapping area, wherein the array of interconnects facilitates electrical surface current flow between the first conductor and the second conductor, and determines a self-resonant frequency of the capacitor;
• and
• a radio frequency port section comprising a tapered conductor configured to couple radio frequency signals to the capacitor, wherein the tapered conductor determines a quality factor value of the capacitor that is substantially independent of at least one of:
• the self-resonant frequency of the capacitor, or
• a capacitance value of the device, wherein the physical interconnect overlapping area is substantially centered substantially opposite the radio frequency port section.