Semiconductor device manufacturing method

A method of manufacturing a semiconductor structure, comprising:

• forming, over a substrate, an optical component having a first main path that splits into a first side path and a second side path spaced from the first side path;
• forming, over the substrate, first, second and third thermal control mechanisms, each comprising:
• a first thermoelectric member having a first conductivity type;
• and
• a second thermoelectric member having a second conductivity type opposite to the first conductivity type,
• wherein, along a first axis,
• the first side path is between the first and third thermal control mechanisms such that no additional side paths or thermal control mechanisms are located between the first and third thermal control mechanisms,
• the second side path is between the second and third thermal control mechanisms such that no additional side paths or thermal control mechanisms are located between the second and third thermal control mechanisms, and
• the third thermal control mechanism is between the first and second side paths;
• and
• forming, over the substrate, at least one thermal sensing device which is, along the first axis, between the second side path and the second thermal control mechanism.

A method of manufacturing a semiconductor structure, comprising:

• forming, over a substrate, an optical component having a first main path that splits into a first side path and a second side path spaced from the first side path;
• forming, over the substrate, first, second and third thermal control mechanisms, each comprising:
• a first thermoelectric member having a first conductivity type;
• and
• a second thermoelectric member having a second conductivity type opposite to the first conductivity type,
• wherein, along a first axis,
• the first side path is between the first and third thermal control mechanisms such that no additional side paths or thermal control mechanisms are located between the first and third thermal control mechanisms,
• the second side path is between the second and third thermal control mechanisms such that no additional side paths or thermal control mechanisms are located between the second and third thermal control mechanisms, and
• the third thermal control mechanism is between the first and second side paths;
• forming a conductor overlapping the first side path in a thickness direction of the substrate, wherein
• the conductor and the first side path are elongated along a second axis transverse to the first axis, and
• along the second axis, the conductor extends continuously over and along an entire length of the first side path;
• forming, over the substrate, a control circuit;
• forming a first conductive structure electrically coupling the control circuit to the first thermal control mechanism;
• and
• forming a second conductive structure electrically coupling the control circuit to the second thermal control mechanism,
• wherein
• the first conductive structure comprises a first set of conductors serially connecting the thermoelectric members of the first thermal control mechanism,
• the second conductive structure comprises a second set of conductors serially connecting the thermoelectric members of the second thermal control mechanism,
• along the first axis, the conductor is between the first set of conductors and the second set of conductors.