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US 12,674,835 B2Granted
Method of analyzing semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi Min Liu, Chien-Yi Chen, Yian-Liang Kuo
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Abstract
A method includes providing a detector disposed above a semiconductor structure; identifying a portion of the semiconductor structure at a temperature substantially greater than a predetermined threshold by the detector, rotating the stage; and deriving a position of the portion of the semiconductor structure based upon the rotation of the stage.
Claims20
A method, comprising:
- identifying a portion of a semiconductor structure at a temperature greater than a predetermined threshold by a detector;
- rotating the semiconductor structure and detecting the portion of the semiconductor structure in different directions;
- and
- deriving a three dimensional position of the portion of the semiconductor structure inside the semiconductor structure based upon the rotating the semiconductor structure,
- wherein the rotating the semiconductor structure comprises rotating the semiconductor structure about a first axis of the semiconductor structure and a second axis of the semiconductor structure orthogonal to the first axis.
2 more elements
A method, comprising:
- applying a voltage to a semiconductor structure and identifying a portion of the semiconductor structure at a temperature greater than a predetermined threshold by a detector;
- rotating the detector around the semiconductor structure, wherein the detector detects the portion of the semiconductor structure in different directions;
- and
- deriving a three dimensional position of the portion of the semiconductor structure inside the semiconductor structure based upon the portion of the semiconductor structure detected by the detector in the different directions.
1 more element
A method, comprising:
- providing a detector and a semiconductor structure;
- identifying a portion of the semiconductor structure at a temperature greater than a predetermined threshold by the detector;
- rotating the semiconductor structure;
- rotating the detector around the semiconductor structure in a circular or elliptical path and detecting the portion of the semiconductor structure in different directions;
- and
- deriving a three dimensional position of the portion of the semiconductor structure inside the semiconductor structure based upon the rotating the semiconductor structure and the rotating the detector.
3 more elements
Dependencies are inferred from the claim text.