US 12,674,832 B2Granted

Evaluation circuit, semiconductor device, and evaluation method

AssigneeWinbond Electronics Corp.

InventorTaihei Shido

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Abstract

An evaluation circuit, a semiconductor device using the evaluation circuit, and an evaluation method using the evaluation circuit are provided to correctly measure the voltage values of individual transistors, while ensuring that there are fewer than four types of measured voltage values. The evaluation circuit includes a first switch element and a second switch element. The first switch element is disposed between a drain of the transistor and a first drain power supply. The second switch element is connected in parallel to the first switch element and disposed between the drain and a second drain power supply. A source of the transistor is electrically connected to A source power supply. A voltage applied to the second drain power supply is equal to a voltage applied to the source power supply.

Claims15

Dependent claims

An evaluation circuit comprising a transistor and further comprising:

a first switch element disposed between a drain of the transistor and a first drain power supply;
a second switch element connected in parallel to the first switch element and disposed between the drain and a power supply which is grounded or has a negative value;
a third switch element disposed between the drain of the transistor and a second drain power supply;
and
a fourth switch element disposed between the first drain power supply and the source power supply and connected to the transistor and the first switch element in parallel;
wherein a source of the transistor is electrically connected to a source power supply,
wherein, a voltage applied to the power supply is equal to a voltage applied to the source power supply, and
wherein the third switch element is electrically connected to a second drain power-supply pad,
wherein element characteristics of the fourth switch element are the same as element characteristics of the first switch element.

6 more elements

A semiconductor device comprising:

a first drain power-supply pad;
a power-supply pad, which is grounded or has a negative value;
a source power-supply pad;
a second drain power-supply pad;
and
an evaluation circuit comprising:
a transistor;
a first switch element disposed between a drain of the transistor and the first drain power-supply pad;
a second switch element connected in parallel to the first switch element and disposed between the drain and the power-supply pad;
a third switch element disposed between the drain of the transistor and the second drain power-supply pad;
and
a fourth switch element disposed between the first drain power-supply pad and the source power-supply pad and connected to the transistor and the first switch element in parallel;
wherein a source of the transistor is electrically connected to the source power-supply pad,
wherein, a voltage applied to the power supply pad is equal to a voltage applied to the source power-supply pad, and
wherein element characteristics of the fourth switch element are the same as element characteristics of the first switch element.

12 more elements

Dependencies are inferred from the claim text.