Method of functionalization of a gate electrode of a field-effect transistor sensor
AssigneeUniversita' Degli Studi Di Bari Aldo Moro
InventorsLuisa Torsi, Gerardo Palazzo, Gaetano Scamarcio
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AssigneeUniversita' Degli Studi Di Bari Aldo Moro
InventorsLuisa Torsi, Gerardo Palazzo, Gaetano Scamarcio
Estimating the term…
A method of functionalization of a gate electrode of a field-effect transistor sensor includes forming a layer of biological recognition elements on a surface of said gate electrode, wherein said layer of biological recognition elements includes a self-assembled structure of one or more specific-binding-pair-forming substances (anti-hIg, anti-IgG, anti-IgM). The layer of biological recognition elements is treated with a solution containing a blocking agent to fill vacancies and prevent nonspecific binding in the self-assembled structure. One or more specific-binding-pair-forming substances immobilized in said layer of biological recognition elements are packed at a density of 0.1×104 μm−2 and 10×104 μm−2, preferably between 1×104 μm−2 and 2×104 μm−2.
A method of functionalization of a gate electrode comprising the steps of:
Dependencies are inferred from the claim text.