Cleaning composition, cleaning method of semiconductor substrate, and manufacturing method of semiconductor element

Abstract

An object of the present invention is to provide a cleaning composition which has excellent removability of a residue (particularly, a residue after CMP) and excellent anticorrosion properties of copper; a cleaning method of a semiconductor substrate; and a manufacturing method of a semiconductor element. The cleaning composition of the present invention contains citric acid, 1-hydroxyethane-1,1-diphosphonic acid, a sulfonic acid-based surfactant, and water, in which a mass ratio of a content of the citric acid to a content of the 1-hydroxyethane-1,1-diphosphonic acid is 20 to 150, a mass ratio of the content of the citric acid to a content of the sulfonic acid-based surfactant is 70 to 1,500, and a pH is 0.10 to 4.00.

Dependencies are inferred from the claim text.