Gas separation membrane and method of producing gas separation membrane
AssigneeSeiko Epson Corporation
InventorYasutaka Matsumoto
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Abstract
A gas separation membrane includes a resin layer including an organopolysiloxane and a modified layer provided at a surface on one side of the resin layer and including a functional group introduced into the surface on one side. When X-ray photoelectron spectrometry, in which X-rays are irradiated from the front surface side of the modified layer, is performed to generate an XPS spectrum in a range including an Si2p peak and the Si2p peak is subjected to waveform separation, the area ratio of the Si—O peak to the Si2p peak is from 2% to 30%.
Claims5
A gas separation membrane comprising:
- a resin layer including an organopolysiloxane;
- and
- a modified layer provided at a surface on one side of the resin layer and including a polar group introduced into the surface on the one side, wherein
- in an X-ray photoelectron spectrometry process, when X-rays are irradiated from a front surface side of the modified layer, an XPS spectrum in a range including an Si2p peak is generated,
- the Si2p peak is subjected to a fitting process to separate an Si—O peak from the Si2p peak, and
- a ratio of an area of the Si—O peak in the XPS spectrum to an area of the Si2p peak in the XPS spectrum is from 2% to 30%.
A method of producing a gas separation membrane, the method comprising:
- an activation treatment step of subjecting a surface on one side of a resin layer to an activation treatment, the resin layer including an organopolysiloxane;
- and
- a polar group-introducing step of bringing a coupling agent into contact with a surface on the one side subjected to the activation treatment to introduce a polar group into the surface on the one side, the polar group-introducing step being provided after the activation treatment step, wherein
- in an X-ray photoelectron spectrometry process, when X-rays are irradiated from the surface on the one side with the polar group introduced, an XPS spectrum in a range including an Si2p peak is generated,
- the Si2p peak is subjected to a fitting process to separate an Si—O peak from the Si2p peak, and
- a ratio of an area of the Si—O peak in the XPS spectrum to an area of the Si2p peak in the XPS spectrum is from 2% to 30%.
Dependencies are inferred from the claim text.