Method of making semiconductor device which includes Fins

A method of manufacturing fins for a semiconductor device, the method comprising:

• forming semiconductor fins including ones thereof having a first cap with a first etch sensitivity (first capped fins) and second ones thereof having a second cap with a second etch sensitivity (second capped fins), the first and second etch sensitivities being different;
• removing second caps and first caps correspondingly of selected ones of the second capped fins and the first capped fins;
• resulting in second and first uncapped fins;
• and
• removing the first and second uncapped fins.

A method of manufacturing fins for a semiconductor device, the method comprising:

• forming semiconductor fins including ones thereof having a first cap with a first etch sensitivity (first capped fins) and second ones thereof having a second cap with a second etch sensitivity (second capped fins), the first and second etch sensitivities being different;
• forming first masks over unselected second capped fins so as to leave selected second capped fins exposed;
• etching with an etchant appropriate for the second etch resulting in second uncapped fins;
• removing the first mask;
• forming second masks over unselected ones of the first capped fins so as to leave selected first capped fins exposed;
• etching with an etchant appropriate for the first etch sensitivity resulting in first uncapped fins;
• and
• removing the second masks;
• and
• removing the first and second uncapped fins.