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US 12,672,588 B2Granted
Semiconductor device and equipment
AssigneeCanon Kabushiki Kaisha
InventorHiroaki Kobayashi
Life of this patent
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Abstract
Embodiments of the present disclosure provide a technique advantageous to an improvement in performance of a semiconductor device. The semiconductor device includes a first monocrystalline semiconductor layer on which a first semiconductor element is arranged, a second monocrystalline semiconductor layer on which a second semiconductor element is arranged, and a thin film transistor electrically connected to the first semiconductor element without an intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer and electrically connected to the second semiconductor element without an intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer.
Claims25
A semiconductor device comprising:
- a first monocrystalline semiconductor layer on which a first semiconductor element is arranged;
- a second monocrystalline semiconductor layer on which a second semiconductor element is arranged;
- and
- a thin film transistor electrically connected to the first semiconductor element without intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer, and electrically connected to the second semiconductor element without intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer,
- wherein the thin film transistor includes an oxide semiconductor layer.
2 more elements
A semiconductor device comprising:
- a first monocrystalline semiconductor layer on which a first semiconductor element is arranged;
- a second monocrystalline semiconductor layer on which a second semiconductor element is arranged;
- and
- a thin film transistor electrically connected to the first semiconductor element without intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer, and electrically connected to the second semiconductor element without intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer,
- wherein a current pathway continues from the thin film transistor to the first semiconductor element, and a current pathway continues from the thin film transistor to the second semiconductor element.
2 more elements
A semiconductor device comprising:
- a circuit board including a substrate and a wiring structure arranged on an upper side of the substrate;
- a first semiconductor chip including a first monocrystalline semiconductor layer on which a first semiconductor element is arranged, the first semiconductor chip being arranged on an upper side of the circuit board;
- and
- a second semiconductor chip including a second monocrystalline semiconductor layer on which a second semiconductor element is arranged, the semiconductor chip being arranged on the upper side of the circuit board,
- wherein the circuit board includes a thin film transistor arranged on the upper side of the substrate, and
- wherein the thin film transistor is electrically connected to the first semiconductor element without intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer, and electrically connected to the second semiconductor element without intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer.
3 more elements
Equipment comprising:
- a first monocrystalline semiconductor layer on which a first semiconductor element is arranged;
- a second monocrystalline semiconductor layer on which a second semiconductor element is arranged;
- a thin film transistor electrically connected to the first semiconductor element without intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer, and electrically connected to the second semiconductor element without intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer, wherein the thin film transistor includes an oxide semiconductor layer;
- and
- at least one of an imaging device, a display device, a processing device, an electromechanical device, a control device, a storage device, a power supply device, or a communication device.
2 more elements
A semiconductor device comprising:
- a monocrystalline semiconductor layer on which a semiconductor element is arranged;
- a wiring structure connected to the semiconductor element, the wiring structure being arranged on a first side of the monocrystalline semiconductor layer;
- a through electrode penetrating through the monocrystalline semiconductor layer;
- and
- a thin film transistor arranged on a second side of the monocrystalline semiconductor layer, the second side being opposite to the first side on which the wiring structure is arranged,
- wherein the semiconductor element and the thin film transistor are electrically connected via the wiring structure and the through electrode.
3 more elements
Equipment comprising:
- a monocrystalline semiconductor layer on which a semiconductor element is arranged;
- a wiring structure connected to the semiconductor element, the wiring structure being arranged on a first side of the monocrystalline semiconductor layer;
- a through electrode penetrating through the monocrystalline semiconductor layer;
- a thin film transistor arranged on a second side of the monocrystalline semiconductor layer, the second side being opposite to the first side on which the wiring structure is arranged, wherein the semiconductor element and the thin film transistor are electrically connected via the wiring structure and the through electrode;
- and
- at least one of an imaging device, a display device, a processing device, an electromechanical device, a control device, a storage device, a power supply device, or a communication device.
3 more elements
Dependencies are inferred from the claim text.