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US 12,672,581 B2Granted
Mesa device with stack thin film passivation
AssigneeLittelfuse Semiconductor (Wuxi) Co., Ltd.
InventorsGlenda Zhang, Lucas Zhang, Lei He
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Abstract
An overvoltage protection device may include an n-type semiconductor substrate, a p-type layer disposed atop the n-type semiconductor substrate, and a passivation region formed in the n-type semiconductor substrate and the p-type layer, wherein the passivation region comprises a semi-insulating polycrystalline silicon (SIPOS) layer.
Claims4
An overvoltage protection device, comprising:
- an n-type semiconductor substrate;
- a p-type layer disposed atop the n-type semiconductor substrate;
- a passivation region formed in the n-type semiconductor substrate and the p-type layer, wherein the passivation region comprises a semi-insulating polycrystalline silicon (SIPOS) layer;
- and
- an oxide-nitride-oxide (ONO) layer atop the SIPOS layer, wherein no portion of the ONO layer is formed directly atop a top surface of the p-type layer.
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A method of forming an overvoltage protection device, the method comprising:
- forming a p-type layer atop an n-type semiconductor substrate;
- forming a passivation region in the n-type semiconductor substrate and the p-type layer, wherein the passivation region comprises a semi-insulating polycrystalline silicon (SIPOS) layer;
- and
- forming an oxide-nitride-oxide (ONO) layer atop the SIPOS layer without forming the ONO layer directly atop a top surface of the p-type layer.
1 more element
Dependencies are inferred from the claim text.