Bonding method

A method, comprising:

• forming a first semiconductor die and a second semiconductor die for a bonded semiconductor device, the first and second semiconductor dies have different sizes;
• configuring a bonding tool, wherein the bonding tool comprises a platform, and a first bonding head and a second bonding head connected to the platform, wherein the first and second bonding heads have different suction configurations;
• selecting the first bonding head as a working bonding head;
• picking the first semiconductor die by the first bonding head and bonding the first semiconductor die to a semiconductor wafer;
• selecting the second bonding head as the working bonding head;
• and
• picking the second semiconductor die by the second bonding head and bonding the second semiconductor die to the semiconductor wafer to thereby form the bonded semiconductor device,
• wherein the first bonding head and the second bonding head have different suction forces.

A method, comprising:

• providing a bonding tool comprising a platform and a plurality of bonding heads connected to the platform in different connection orientations;
• attaching a first semiconductor die to a wafer by a first one of the plurality of bonding heads;
• releasing the first semiconductor die from the first one of the plurality of bonding heads;
• and
• rotating the platform to cause a second one of the plurality of bonding heads to attach a second semiconductor die to the wafer,
• wherein each of the first and second bonding heads comprises a bending member configured to bend the first or second semiconductor die when attaching the first or second semiconductor die to the first or second bonding head, respectively.