Integrated circuit device

A method of forming an integrated circuit (IC) device, the method comprising:

• mounting a first die on a substrate, the first die including:
• a silicon region having a coefficient of thermal expansion (CTEsilicon);
• and
• a conductive contact on a first side of the first die;
• forming an encapsulant on the first die, the encapsulant having a coefficient of thermal expansion (CTEencapsulant), wherein a mismatch between the CTEsilicon and the CTEencapsulant defines a thermal stress interface between the silicon region and the encapsulant;
• forming a dielectric layer over the first die and the encapsulant, the dielectric layer including a dielectric spacer region extending over and laterally across the thermal stress interface;
• and
• forming a redistribution layer (RDL) including an RDL element extending over the dielectric spacer region, the RDL element electrically connected to the conductive contact of the first die through a first opening in the dielectric layer;
• wherein the RDL element is physically spaced apart from the thermal stress interface by the dielectric spacer region.

An integrated circuit (IC) device, comprising:

• a first die including:
• an array of first die solder contacts on a first side of the first die;
• and
• a plurality of conductive traces on the first side of the first die,
• wherein the first die has a lateral outer perimeter defining a first die footprint;
• a second die mounted to the first die in a face-to-face arrangement with a first side of the second die facing the first side of the first die;
• wherein the second die includes an array of second die solder contacts respectively electrically connected to the array of first die solder contacts by respective solder bonds;
• and
• wherein the second die has a lateral outer perimeter defining a second die footprint;
• and
• a redistribution layer (RDL) including a plurality of RDL elements;
• wherein a respective RDL element of the plurality of RDL elements:
• (a) is connected to a respective conductive trace of the plurality of conductive traces on the first side of the first die at a location within the lateral outer perimeter of the second die;
• and
• (b) extends laterally outside the lateral outer perimeter of the first die and outside the lateral outer perimeter of the second die, so that a portion of the respective RDL element is located between the first die and the second die in a vertical plane.