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US 12,672,491 B2Granted
Deposition of silicon nitride with enhanced selectivity
AssigneeEntegris, Inc.
InventorsHan Wang, Bryan Clark Hendrix, Eric Condo
Life of this patent
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AssigneeEntegris, Inc.
InventorsHan Wang, Bryan Clark Hendrix, Eric Condo
Estimating the term…
The use of selective deposition of silicon nitride can eliminate conventional patterning steps by allowing silicon nitride to be deposited only in selected and desired areas. Using a silicon iodide precursor alternately with a thermal nitrogen source in an ALD or pulsed CVD mode, silicon nitride can be deposited preferentially on a surface such as silicon nitride, silicon dioxide, germanium oxide, SiCO, SiOF, silicon carbide, silicon oxynitride, and low k substrates, while exhibiting very little deposition on exposed surfaces such as titanium nitride, tantalum nitride, aluminum nitride, hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, lanthanum oxide, yttrium oxide, magnesium oxide, calcium oxide, and strontium oxide.
A process for depositing a silicon nitride film on a microelectronic device substrate having a plurality of surfaces of differing composition, which comprises
A microelectronic device having a plurality of surfaces of differing composition, wherein the device comprises at least one first surface comprising at least one surface chosen from silicon nitride, silicon dioxide, germanium oxide, SiCO, SiC, SiON, SiOF, and low-k substrates, and one surface comprising at least one second surface chosen from titanium nitride, tantalum nitride, aluminum nitride, hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, lanthanum oxide, yttrium oxide, magnesium oxide, calcium oxide, strontium oxide, and wherein the first surface has deposited thereon a silicon nitride film having a thickness of at least 200 Å, and wherein the second surface has deposited thereon a silicon nitride film having a thickness of no more than about 3 Å.
A microelectronic device having a plurality of surfaces of differing composition, wherein the device comprises at least one surface comprising silicon dioxide, and at least one surface comprising aluminum oxide, and wherein the surface comprising silicon dioxide has deposited thereon a silicon nitride film having a thickness of at least 200 Å, and wherein the surface comprising aluminum oxide has deposited thereon a silicon nitride film having a thickness of no more than about 3 Å.
A process for selectively depositing a silicon nitride film on a microelectronic device substrate having a plurality of surfaces of differing composition, which comprises:
Dependencies are inferred from the claim text.