Opto-electronic device with nanoparticle deposited layers

A method for controllably selecting formation of at least one particle structure on an underlying layer during manufacture of a semiconductor device having a plurality of layers, comprising actions of:

• depositing at least one layer, including the underlying layer;
• and
• exposing an exposed layer surface of the underlying layer to a flux of a particle material such that the particle material comes into contact with a contact material selected from at least one of:
• a seed material,
• a co-deposited dielectric material, and
• at least one patterning material;
• wherein the particle material coalesces to dispose the at least one particle structure on the underlying layer,
• wherein the action of exposing is preceded by an action of limiting the formation of the at least one particle structure to a first portion of a lateral aspect of the device,
• wherein the action of limiting comprises an action of seeding the seed material in a templating layer on the underlying layer in the first portion.