Stack structure and manufacturing method thereof, capacitor using the same, transistor using the same, dye-sensitized solar cell using the same, and architectural film for window glass coating using the same

A method for manufacturing a stack structure, the method comprising:

• preparing a substrate;
• forming a channel layer including a two-dimensional (2D) semiconductor material including hafnium diselenide (HfSe2) on the substrate;
• and
• oxidizing the channel layer using oxygen (O2) plasma to form a dielectric layer including a high-k material comprising hafnium oxide (HfOx, x>0),
• wherein a power of oxygen (O2) plasma is controlled to be greater than 7 W and less than 20 W,
• wherein an interface is formed between the channel layer and the dielectric layer by substitution of selenium atoms of the hafnium diselenide (HfSe2) with oxygen atoms penetrating into the channel layer and replacing the selenium atoms of the hafnium diselenide (HfSe2),
• wherein there is no collapse of the interface formed between the channel layer and the dielectric layer, and
• wherein a thickness of the dielectric layer formed by oxidizing the channel layer satisfies Equation 3 below,
• t
• 0
• -
• t
• 3
• =
• 1.8
• t
• 1
• -
• t
• 1
• =
• 0.8
• t
• 1
• 〈
• Equation
• ⁢
• 3
• 〉
• (t0:
• a thickness of an initial channel layer, t1:
• the thickness of the dielectric layer formed by oxidizing the channel layer, t3:
• a combined total thickness of a post-oxidation channel layer and the dielectric layer).