Solid-state imaging device and electronic device
AssigneeSony Group Corporation
InventorHideo Kido
Life of this patent
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Abstract
The present technology relates to a solid-state imaging device and an electronic device capable of improving a saturation characteristic. A photo diode is formed on a substrate, and a floating diffusion accumulates a signal charge read from the photo diode. A plurality of vertical gate electrodes is formed from a surface of the substrate in a depth direction in a region between the photo diode and the floating diffusion, and an overflow path is formed in a region interposed between a plurality of vertical gate electrodes. The present technology may be applied to a CMOS image sensor.
Claims20
A light detecting device, comprising:
- a substrate;
- a photoelectric conversion region;
- a floating diffusion;
- a first vertical gate electrode;
- a second vertical gate electrode, wherein the floating diffusion accumulates a signal charge transferred from the photoelectric conversion region through the first vertical gate electrode and the second vertical gate electrode;
- a first semiconductor region including a first portion and a second portion;
- and
- a second semiconductor region disposed between the first vertical gate electrode and the second vertical gate electrode, wherein:
- the first vertical gate electrode is disposed between the first portion of the first semiconductor region and the second semiconductor region;
- the second vertical gate electrode is disposed between the second semiconductor region and the second portion of the first semiconductor region;
- and
- at a first distance from a surface of the substrate in a depth direction, a potential of a first portion of the second semiconductor region is lower than a potential of the first portion of the first semiconductor region and a potential of the second portion of the first semiconductor region.
An imaging device comprising:
- a light detecting device comprising:
- a substrate;
- a photoelectric conversion region;
- a floating diffusion;
- a first vertical gate electrode;
- a second vertical gate electrode, wherein the floating diffusion accumulates a signal charge transferred from the photoelectric conversion region through the first vertical gate electrode and the second vertical gate electrode;
- a first semiconductor region including a first portion and a second portion;
- a second semiconductor region disposed between the first vertical gate electrode and the second vertical gate electrode, wherein:
- the first vertical gate electrode is disposed between the first portion of the first semiconductor region and the second semiconductor region;
- the second vertical gate electrode is disposed between the second semiconductor region and the second portion of the first semiconductor region;
- and
- at a first distance from a surface of the substrate in a depth direction, a potential of a first portion of the second semiconductor region is lower than a potential of the first portion of the first semiconductor region and a potential of the second portion of the first semiconductor region.
Dependencies are inferred from the claim text.