Avalanche photodiodes
AssigneeGeorgia Tech Research Corporation
InventorsPatrick Stephen Goley, John D. Cressler
Life of this patent
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Abstract
An exemplary embodiment of the present disclosure provides an avalanche photodiode (APD), comprising: a p-doped substrate; a first n-doped region; an n-doped epitaxial region; a plurality of n-doped wells; and a first p-doped region. The first n-doped region can be positioned above at least a portion of the p-doped substrate. The n-doped epitaxial region can be positioned above at least a portion of the first n-doped region. The plurality of n-doped wells can be positioned within the first n-doped epitaxial region. The first p-doped region can be positioned above the n-doped epitaxial region and the plurality of n-doped wells.
Claims19
An avalanche photodiode comprising:
- a p-doped substrate;
- a first n-doped region positioned above at least a portion of the p-doped substrate;
- an n-doped epitaxial region positioned above at least a portion of the first n-doped region;
- a plurality of n-doped wells positioned within the n-doped epitaxial region;
- and
- a first p-doped region positioned above the n-doped epitaxial region and the plurality of n-doped wells;
- wherein at least one of:
- the first p-doped region has a higher doping concentration than the p-doped substrate;
- the first p-doped region comprises SiGe;
- or
- the p-doped substrate, the first n-doped region, the n-doped epitaxial region, and the plurality of n-doped wells each comprise silicon and the first p-doped region comprises SiGe.
An avalanche photodiode comprising:
- a p-doped substrate;
- a first n-doped region positioned above at least a portion of the p-doped substrate;
- an n-doped epitaxial region positioned above at least a portion of the first n-doped region;
- a plurality of n-doped wells positioned within the n-doped epitaxial region;
- a first p-doped region positioned above the n-doped epitaxial region and the plurality of n-doped wells;
- and
- a plurality of shallow trench isolations positioned beneath the first p-doped region and extending into at least a portion of n-doped epitaxial region.
An avalanche photodiode comprising:
- a p-doped substrate;
- a first n-doped region positioned above at least a portion of the p-doped substrate;
- an n-doped epitaxial region positioned above at least a portion of the first n-doped region;
- a plurality of n-doped wells positioned within the n-doped epitaxial region;
- a first p-doped region positioned above the n-doped epitaxial region and the plurality of n-doped wells;
- and
- a second p-doped region positioned above at least a portion of the p-doped substrate;
- wherein the second p-doped region extends around a perimeter of at least a portion of the first n-doped region and the n-doped epitaxial region.
An avalanche photodiode comprising:
- a p-doped silicon substrate;
- an n-doped silicon region positioned above at least a portion of the p-doped silicon substrate and forming at least a portion of a cathode of the avalanche photodiode;
- an n-doped epitaxial silicon region positioned above at least a portion of the first n-doped silicon region;
- a plurality of n-doped silicon wells positioned within the n-doped epitaxial silicon region;
- a p-doped silicon region positioned above the n-doped epitaxial silicon region and the plurality of n-doped silicon wells;
- a plurality of shallow trench isolations positioned beneath the p-doped silicon region and extending into at least a portion of the n-doped epitaxial silicon region;
- and
- a p-doped SiGe region positioned above the n-doped epitaxial silicon region and the plurality of n-doped silicon wells and forming an anode of the avalanche photodiode;
- wherein:
- the n-doped silicon region has a higher doping concentration than a doping concentration of both the n-doped epitaxial silicon region and the plurality of n-doped silicon wells;
- and
- the p-doped SiGe region has a higher doping concentration than the p-doped silicon substrate.
Dependencies are inferred from the claim text.